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FD6M045N06 60V/60A Synchronous Rectifier Module
March 2008
FD6M045N06
60V/60A Synchronous Rectifier Module
General Features
* Very High Rectification Efficiency at Output 12V * Integrated Solution for Saving Board Space * RoHS Compliant
Power-SPMTM
tm
General Description
The FD6M045N06 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS(ON) MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise.
MOSFET Features
* VDSS = 60V * QG(TOTAL) = 66nC(Typ.), VGS = 10V * RDS(ON) = 3.6m(Typ.), VGS = 10V, ID = 40A * Low Miller Charge * Low Qrr Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Fully Isolated Package
Applications
* High Current Isolated Converter * Distributed Power Architectures * Synchronous Rectification * DC/DC Converter * Battery Supplied Application * ORing MOSFET
1
15
EPM15 Package
Block Diagram
10
G2 D2
9 15
8
Q2
G1
14 13
S2
6
12 7
Q1
11
D1
S1
1
2
3
4
5
Figure 1. FD6M045N06 Module Block Diagram
(c)2008 Fairchild Semiconductor Corporation
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FD6M045N06 Rev. A1
FD6M045N06 60V/60A Synchronous Rectifier Module
Pin Configuration and Pin Description
Top View
D1
S1
G1 NC
NC NC
G2
S2
D2
Figure 2. Pinmap of FD6M045N06
Pin Number
1 2~5 6 7 8 9 10 11 ~ 14 15
Pin Name
D1 S1 G1 NC NC NC G2 S2 D2
Pin Description
Drain of Q1, MOSFET Source of Q1, MOSFET Gate of Q1, MOSFET No Connection No Connection No Connection Gate of Q2, MOSFET Source of Q2, MOSFET Drain of Q2, MOSFET
Absolute Maximum Ratings TC = 25C,
Symbol VDS VGS ID EAS TJ, TSTG Drain to Source Voltage Gate to Source Voltage
Unless Otherwise Specified Rating
(Note1)
Parameter
Unit V V A mJ C
60 20
Drain Current, Continuous (VGS = 10V) Single Pulse Avalanche Energy Operating and Storage Temperature Range
(Note1) (Note1,2)
60 794 -40 ~ 150
Thermal Resistance
Symbol RJC
Note: 1. Each MOSFET Switch 2. Starting TJ = 25C, VD = 40V, L = 0.25mH, IAS = 46A
Parameter Junction to Case Thermal Resistance
(Note1)
Min. -
Typ. -
Max. 3.9
Unit C/W
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
Electrical Characteristics TC = 25C, Unless Otherwise Specified
Symbol Parameter Test Conditions Min. Typ. Max. Units
Synchronous Rectifier Switch Part (Each Switch)
BVDSS IDSS IGSS VGS(TH) RDS(ON) Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Voltage Drain to Source On Resistance ID= 250A, VGS = 0V VGS = 0V, VDS = 48V VGS = 20V VD = 20V, IDS = 250A ID = 40A, VGS = 10V
TJ = 150C
60 2.0 -
3.55 6.7
1 100 4.0 4.5 -
V A nA V m
Dynamic Charateristics
CISS COSS CRSS Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "MIller" Charge VGS = 0V to 10V VGS = 0V to 2V VDD = 40V ID = 40A Ig = 1.0mA VDS = 25V, VGS = 0V f = 1MHz 3890 755 270 66 7 18 11 20 87 10 pF pF pF nC nC nC nC nC
Switching Charateristics (VGS = 10V)
tON td(on) tr td(off) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time ID = 40A VGS = 10V, VDD = 40V, RG = 5 18 19 35 23 60 100 ns ns ns ns ns ns
Drain-Source Diode Charateristics
VSD trr Qrr Source to Drain Diode Voltage ISD = 80A, VGS = 0V ISD = 40A, VGS = 0V Reverse Recovery Time Reverse Recovery Charge ISD = 40A, dISD/dt = 100A/s ISD = 40A, dISD/dt = 100A/s 33 34 1.25 1.0 V ns nC
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
Typical Performance Characteristics Each Switch, Unless Otherwise Specified
Figure 3. On-Region Characteristics
120
VGS 10.0 V 8.0 V 7.0 V 6.0 V Bottom : 5.0 V Top :
ID
VDS
ID, Drain Current[A]
80
D
VGS
G
40
*Notes : 1. 250s Pulse Test o 2. TC = 25 C
VDS
VGS,STEP
FD6M045N06 S
1.5
0 0.0
0.5
1.0
VDS, Drain-Source Voltage[V]
Figure 4. Transfer Characteristics
160
ID VDS
ID, Drain Current[A]
D
VGS
120
150 C
o
80
G
VGS
25 C -40 C
o
o
VDS
40
FD6M045N06 S
0 3.0 3.5 4.0 4.5
*Notes : 1. VDS = 15V 2. 250s Pulse Test
5.0
5.5
6.0
VGS, Input Voltage[V]
Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100 IS, Reverse Drain Current [A]
Figure 6. Output Capacitance Characteristics
8
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
6 Capacitance [nF]
150 C
o
25 C
o
Ciss
10
4
Coss * Notes : 1. VGS = 0 V 2. f = 1 MHz
*Notes : 1. VGS = 0V 2. 250s Pulse Test
2
Crss
1 0.4 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V]
0 0.1
1
10
60
VDS, Drain-Source Voltage [V]
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.20
RDS(ON), (Normalized) Drain-Source On-Resistance
* Notes: 1. VGS = 0V 2. ID = 250A
Figure 8. On-Resistance Variation vs. Temperature
2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature [C] 200
* Notes : 1. VGS = 10 V 2. ID = 40 A
1.10
1.00
0.90 0.85 -50 0 50 100 150 200 TJ, Junction Temperature [C]
Figure 9. Transient Thermal Response Curve
10 Thermal Response [ZJC]
0.5
1
0.2 0.1 0.05
0.1
PDM t1 t2
0.02 0.01
*Notes:
0.01
Single pulse
1. ZJC(t) = 3.9 C/W Typ. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
-4
o
0.001 -5 10
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
Rectangular Pulse Duration [sec]
Figure 10. Maximum Safe Operating Area
200 100
1ms
Figure 11. Unclamped Inductive Switching Capability
400
If R = 0 tAV = (L)(IAS)/(1.3*Rated BVDSS - VDD) If R ? 0 tAV = (L/R)ln[(IAS*R)/(1.3*Rated BVDSS - VDD) + 1]
100s
10ms
10
DC Operation in This Area is Limited by R DS(on)
IAS, Avalanche Current [A]
ID, Drain Current [A]
100
Starting TJ = 25 C
o
10
Starting TJ = 125 C
o
1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
0.1 0.1
1 10 VDS, Drain-Source Voltage [V]
100
1 0.01
0.1
1
10
100
1000
tAV, Time In Avalanche [ms]
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
AC Test Circuits and Waveforms
IAS
VDS L
tp IAS
VDS
D
VGS
VDD
VGS
G
VDD
tp S
FD6M045N06
0 tAV
Figure 12. Unclamped Inductive Switching Test Circuit and Waveforms
VDS
D
VGS
RG
RL
G
VDD
PULSE
FD6M045N06 S
Figure 13. Switching Test Circuit
tON td(ON) tr
90%
tOFF td(OFF) tf
90%
VDS
10% 10%
90%
VGS
10%
50%
50%
PULSE WIDTH
Figure 14. Switching Test Waveforms
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
Application circuits
VIN
10
G2
VOUT
9 15
D2
8
Q2
6
G1
14 13
S2
7
PWM Controller
D1
12
Q1 S1
11 2 3 4 5
1
OPTO Feedback
Figure 3. Application Circuit of Forward Converter with FD6M045N06
LF
VOUT
VIN
G2
10
9
15
D2 CF
Q1
8
Q2
CR
6
G1
14 13
S2 VOUT_FB FOD817
7
Q1
12
KA431
Q2
1
11
S1
D1
2
3
4
5
LF
Figure 4. Application Circuit of Asymmetrical HB Converter with FD6M045N06
VIN
Q1 Q3
G2 LF
VOUT
10
9
15
D2 CF
8
Q2
6
G1
14 13
S2 VOUT_FB FOD817
7
Q1 D1 S1
12
KA431
Q2
Q4
1
11 2 3 4 5
LF
Figure 5. Application Circuit of Full Bridge Converter with FD6M045N06
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
Detailed Package Outline Drawings
26.20 25.80 23.10 22.90
2.70 2.30 (0.50) (R0.50)
5.35 5.15 10.70 10.30 (12.00) (1.50) (R0.55) (0.77) (R0.55) 0.70 0.30 (6.00) 18.50 17.50
14.50 13.50
MAX 3.07 2.97 2.77 1.27
MAX 0.80 0.70 0.50
0.60 0.40 3.48 2.88
22.86
(R0.50)
2.70 2.30
Figure 6. EPM15 Package
Dimensions in Millimeters
FD6M045N06 Rev. A1
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FD6M045N06 60V/60A Synchronous Rectifier Module
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
tm
FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SupreMOSTM SyncFETTM (R) The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
2.
A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification
Advance Information
Product Status
Formative or In Design
Definition
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
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